Damage formation and annealing studies of low energy ion implants in silicon using medium energy ion scattering
The work described in this thesis concerns studies of damage and annealing processes in ion implanted Si, relevant for the formation of source / drain extensions in sub 100 nm CMOS devices. Implants were carried out using 1-3 keV As, BF2 and Sb ions and implanted samples were annealed at temperature...
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University of Salford
2006
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.491048 |