Strain relaxation mechanisms and stress-balancing of SiGe heterostructures
Until now, progress of the microelectronic industry has been maintained by scaling devices. Physical limits now necessitate alternative approaches such as enhancing material properties through strain engineering or increasing functionality through use of Si/SiGe heterostructures (e.g. optoelectronic...
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Imperial College London
2008
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.491115 |