Stacked self-assembled InAs/GaAs quantum dot lasers
Stacked self-assembled binary InAs/GaAs quantum dot (00) lasers without strain reduction layers were grown using molecular beam epitaxy, operating near 1.3 I-lm under almost room temperature conditions. In order to fabricate the most efficient 00 laser, this work was divided into two major sections:...
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University of Manchester
2008
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.492128 |