Electron microscopy of defects in ultra-wide band gap nitrides
AlGaN is currently being studied for the development of UV applications, owing to its ultra-wide band gap which varies with aluminium concentration. Key challenges are to reduce the density of threading dislocations in AlGaN films which arise due to lattice inbrnatch with the substrate, and to p- an...
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University of Bristol
2005
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.492609 |