Characterization of thermal dissipation within integrated gate bipolar transistor (IGBT) layered packaging structure
Integrated Gate Bipolar Transistors (IGBTs) generally have a high output power and generate significant amounts of heat, which needs to be removed from the chip to ensure continued operation. Since IGBT chips are commonly mounted on a layered assembly structure which is in turn mounted onto a heat s...
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University of Hull
2008
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.494895 |