Dislocation related defects in silicon and gallium nitride
This thesis examines the kinetics of carrier capture and emission from dislocations in silicon (Si) and gallium nitride (GaN) using deep level transient spectroscopy (DLTS) and Laplace DLTS (LDLTS).Laplace DLTS is a powerful tool in characterising point defect related emission, but until now it has...
| Main Author: | |
|---|---|
| Other Authors: | |
| Published: |
Sheffield Hallam University
2007
|
| Subjects: | |
| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.495475 |