Nanometric characterisation of III-nitride semiconductors
An investigation on the optical, composition and surface properties of the III-nitride ternary alloys InxGa₁-xN and Al₁-xInxN is presented. The structures studied are single quantum wells (SQWs) and epilayers. The effects of various GaN cap thicknesses, well widths, Si doping concentrations in the b...
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University of Strathclyde
2009
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.501654 |