Electrical Characterisation and Modelling of Schottkybarrier metal source/drain MOSFETs
The motivation for the work- presented in this thesis originates in the semiconductor industry's drive to create increasingly scaled transistors. In view of current device dimensions approaching fundamental atomic scales, the industry is looking to alternative structures to provide continued sc...
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University of Warwick
2007
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.502175 |