Electron transport in InSb/AlInSb semiconductor heterostructures
InSb has the lowest bulk electron effective mass and the narrowest band gap of the III-V semiconductors, as well as a large dielectric constant and Lande g-factor, as a result of strong spin orbit coupling. These properties make it an exciting candidate for many different applications including high...
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University of Manchester
2011
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.542731 |