Ion bombardment induced compositional changes in compound semiconductor surfaces studied by XPS combined with LEISS
Surface compositional change of GaP, GaAs, GaSb, InP, InAs, InSb, GeSi and CdSe single crystals due to low keV noble gas ion beam bombardment has been investigated by combining X-ray Photoelectron Spectroscopy (XPS) and Low Energy Ion Scattering Spectroscopy (LEISS). The purpose of using this comple...
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Aston University
1995
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.544653 |