Development of SiC heterojunction power devices
Silicon carbide (SiC), with its wide bandgap, high thermal conductivity and natural oxide is a substrate that has given rise to a new generation of power devices than can operate at high temperature, high power and high frequency, though the material is not without its problems. SiC "heterojunc...
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University of Warwick
2011
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.549224 |