A1InGaN based materials and devices for optoelectronics
In this work the optimisation of metal contacts to Ill-nitrides will be analysed together with the optical and optoelectronic properties of AlIllGaN /GaN epistructures and devices. The activation of p-Ca : was optimized by varying the annealing temperature, time and the mixture of flowing gases. Aro...
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University of Sheffield
2011
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.555120 |