Developing epitaxial graphene for the purpose of nanoelectronics
Work presented here has been centered around the growth of epitaxial graphene via the thermal decomposition of 4H silicon carbide wafers. Improvements to ultra high vacuum growth procedures used within the research group have been made via the optimization of annealing times and temperatures. The op...
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University of Leeds
2012
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.559135 |