Growth and characterisation of dilute nitride antimonide layers by plasma-assisted molecular beam epitaxy
The work presented in this thesis is concerned with the growth and characterisation of III-NSb films by plasma-assisted molecular beam epitaxy (PA-MBE). The research was motivated by their application in technologically important regions of the IR spectrum. Homoepitaxial growth of GaSb films was con...
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University of Warwick
2011
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.560143 |