Towards electron holography of working transistors
As semiconductor device dimensions are reduced to the deep sub-micron regime, minor departures from the designed distributions of electrostatic potentials can affect device performance dramatically. Parameter optimisation in device processing and modelling is crucial for achieving precise potential...
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Imperial College London
2012
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.560761 |