Development of Monte-Carlo simulations for III-V semiconductors employing an analytic band-structure
The thesis is primarily concerned with the III-V-N semiconductors Gallium Nitride (GaN) and the dilute nitride Gallium Nitrogen Arsenide (GaNAs) and the effect that the band structure has on electron transport in these materials. Ensemble Monte-Carlo algorithms are developed in order to determine th...
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University of Hull
2012
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.561042 |