Computational studies of III-V nitride semiconductors
GaN and related nitride compounds have found many applications in optoelectronic devices. Point defects introduce energy levels into the band gap and alter the electrical and optical properties of GaN. Previous studies focussed on studying point defects with density functional theory (DFT), periodic...
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University College London (University of London)
2011
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.565595 |