High-performance III-V quantum-dot lasers monolithically grown on Si and Ge substrates for Si photonics
Self-assembled III-V quantum dots (QDs) attract intense research interest and effort due to their unique physical properties arising from the three-dimensional confinement of carriers and discrete density of states. Semiconductor III-V QD laser structures exhibit dramatically improved device perform...
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University College London (University of London)
2012
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.568246 |