A study of reactive ion etching of gallium arsenide in mixtures of methane and hydrogen plasmas
The aim of this research was to investigate the reactive ion etching (RIE) of gallium arsenide (GaAs) in mixtures of methane and hydrogen (CH ₄H₂) plasma and to evaluate thier advantages over chlorinated plasmas. This was performed in order to find the optimum etching conditions for GaAs such as, th...
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Middlesex University
1992
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.568423 |