Reversible electrical breakdown in amorphous chalcogenides

An investigation has been made of reversible electrical breakdown in amorphous chalcogenides with particular attention being paid to the on-state properties of Si12 Te48As30Ge10 glass threshold switches. Apparatus is described for the preparation of well-characterised materials and flash-evaporated...

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Bibliographic Details
Main Author: Irfan, A. Y.
Other Authors: Williams, J. L.
Published: University of Greenwich 1974
Subjects:
Online Access:http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.571359