Reversible electrical breakdown in amorphous chalcogenides
An investigation has been made of reversible electrical breakdown in amorphous chalcogenides with particular attention being paid to the on-state properties of Si12 Te48As30Ge10 glass threshold switches. Apparatus is described for the preparation of well-characterised materials and flash-evaporated...
Main Author: | Irfan, A. Y. |
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Other Authors: | Williams, J. L. |
Published: |
University of Greenwich
1974
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Subjects: | |
Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.571359 |
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