Electrically pumped GaInNAs vertical cavity semiconductor optical amplifiers for operation at 1.3[mu]m wavelength

In - V semiconductors are indispensable for, today's optoelectronic devices such as semiconductor lasers and optical amplifiers in the 1.3 urn wavelength band used for fibre optic communication systems. This has led to the invention of a dilute nitride GaInNAs that is lattice matched to GaAs fo...

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Bibliographic Details
Main Author: Chaqmaqchee, Faten Adel Ismael
Published: University of Essex 2012
Subjects:
Online Access:http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.573063