Electrically pumped GaInNAs vertical cavity semiconductor optical amplifiers for operation at 1.3[mu]m wavelength
In - V semiconductors are indispensable for, today's optoelectronic devices such as semiconductor lasers and optical amplifiers in the 1.3 urn wavelength band used for fibre optic communication systems. This has led to the invention of a dilute nitride GaInNAs that is lattice matched to GaAs fo...
Main Author: | Chaqmaqchee, Faten Adel Ismael |
---|---|
Published: |
University of Essex
2012
|
Subjects: | |
Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.573063 |
Similar Items
-
GaInNAs : a novel material for broadband applications
by: Pozo, JoseÌ
Published: (2007) -
Amplified spontaneous emission and gain dynamics in semiconductor optical amplifiers
by: Talli, Giuseppe
Published: (2004) -
Optical switching using semiconductor laser amplifiers
by: Yao, Jianguo
Published: (1995) -
Novel numerical technique for analysis of carrier density pulsations in semiconductor optical amplifiers
by: Khoo, Chen Hou
Published: (2004) -
Advanced applications of semiconductor optical amplifiers
by: Annetts, Paul Julian
Published: (1999)