Study of InAs and InP semiconductor quantum dot nanostructures by transmission electron microscopy
III- V semiconductor materials are the foundation of many modern electronic and optical devices. In particular, Ill-V semiconductor quantum dots (QDs) are successfully utilized in many applications especially where high optical output (laser diodes) is required. With the aim to improve the performan...
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University of Sheffield
2011
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.575741 |