Characerisation of Ingan gan quantum well light emitting diodes
By focussing on the properties of InGaN/GaN quantum well (QW) LEDs the key physical processes relevant to all InGaN/GaN light emitters are studied. These include the strength of the piezoelectric field, the important current pathways and the effect doping densities and anneal temperatures have on de...
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Cardiff University
2004
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.583464 |