Internal field effects in InGaN quantum wells
InGaN/GaN based quantum well structures are strained and due to the lack of a centre of symmetry large internal fields are present which skew the potential of the quantum wells, this has a large effect on the properties of these structures. InGaN/GaN based quantum well structures are studied using a...
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Cardiff University
2005
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.583649 |