Characterisation of In(Ga)As quantum dot lasers
Self-assembled InAs quantum dot lasers have been characterised by measuring the modal absorption and gain along with radiative and non-radiative current densities as well as determining threshold current densities as a function of length. The number of dot layers stacked and the GaAs spacer layers u...
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Cardiff University
2006
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.583960 |