Optoelectronic properties of InP AlGaInP quantum dot laser diodes
The aim of this thesis is to understand and optimise the optoelectronic properties of InP quantum dot laser diodes which operate in the range around 730nm required for various application such as the photodynamic therapy. The properties of wafers with two barrier widths, 8 and 6nm, each grown at dif...
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Cardiff University
2009
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.584654 |