Exploitation of phemt in microwave power limiters
This thesis describes the design and the study of implementing microwave power limiters with Gallium Arsenide (GaAs) pseudomorphic high electron mobility transistors (PHEMTs). Circuits were fabricated in microwave integrated circuits (MICs) and monolithic microwave integrated circuits (MMICs) format...
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University of Manchester
2007
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.594759 |