Growth and characterisation of low-dimensional semiconductor structures
Molecular Beam Epitaxy (MBE) is a growth technique which allows a high level of control over the composition of single crystal epilayers deposited on a suitable single-crystal substrate. MBE growth of GaAs/AlGaAs heterostructures allows abrupt, defect-free interfaces to be fabricated, which, combine...
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University of Cambridge
2003
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.596215 |