Silicon single electron transistors in high magnetic fields for quantum computing
This report describes experimental work performed on highly phosphorous doped silicon single electron transistors (SET) both with and without a nearby isolated double-dot structure (IDD). Measurements are performed at milli-Kelvin temperatures and at 4K for magnetic fields from 0T to 15T. It is foun...
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University of Cambridge
2009
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.597483 |