Magnetotransport studies of InAs/GaSb/AlSb-based structures
A reliable procedure has been developed which facilitates the fabrication of low-leakage front and back gated lateral transport devices in which electrons and holes reside in adjacent layers. This gating permits the alteration of the electron and hole densities in such devices almost independently o...
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University of Cambridge
2000
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.597965 |