Off-axis electron holography of focused ion beam prepared semiconductor devices
Off-axis electron holography promises to fulfill the requirements of the semiconductor industry for a technique that can be used to provide quantitative information about dopant potentials in semiconductors with nanometer spatial resolution. The technique involves using an electron biprism in a tran...
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University of Cambridge
2006
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.597966 |