The filling of submicron vias with thermally pulsed copper
In the latest 180 nm node semiconductor devices the connections between different levels of circuitry are increasingly made through copper-filled submicron barrier-coated vias formed in the insulating layers separating the wiring levels. Filling high aspect ratio vias with copper is at present accom...
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University of Cambridge
2002
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.598570 |