Transport in silicon nanowires
This thesis models the electrical breakup of geometrically uniform heavily doped silicon nanowires under the action of the random dopant potential. A self-consistent Thomas-Fermi model is used to show the natural formation of islands and structured characteristics of the system are presented. The is...
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University of Cambridge
2002
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.598915 |