Electron transport in n-type SiGe double quantum dots
This thesis presents an experimental investigation into the properties of highly doped (<i>n<sub>phosphorous </sub></i> ~ 1.4 x 10<sup>19</sup><i>cm<sup>-</sup></i><sup>3</sup>) n-type silicon-germanium double quantum dots. The...
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University of Cambridge
2003
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.598980 |