Silicon heterojunction bipolar transistors with wide band-gap amorphous semiconductor emitters
Firstly, the motivation behind the silicon HBT is discussed, followed by an investigation of tetrahedral amorphous carbon (ta-C) as a possible heteroemitter material. Silicon HBTs with n-type ta-C as a heteroemitter in npn transistors were studied first. Transistor action occurred, but the current g...
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University of Cambridge
1998
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.599324 |