Low-dimensional systems in silicon/silicon-germanium heterostructures
Recent advances in epitaxial growth technology have made the formation of high-quality, strained-layer heterostructures in the silicon-germanium material system possible. This thesis presents an overview of a range of low-temperature measurements of some of these structures. As the materials are rel...
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University of Cambridge
1999
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.599710 |