Germanium on silicon photonic devices
There is presently increased interest in using germanium (Ge) for both electronic and optical devices on top of silicon (Si) substrates to expand the functionality of Si technology. It has been extremely difficult to form an Ohmic contact to n-Ge due to Fermi level pinning just above the Valence ban...
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University of Glasgow
2013
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.601547 |