Leakage current and resistive switching mechanisms in SrTiO3
Resistive switching random access memory devices have attracted considerable attention due to exhibiting fast programming, non-destructive readout, low power-consumption, high-density integration, and low fabrication-cost. Resistive switching has been observed in a wide range of materials but the un...
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University of Newcastle upon Tyne
2013
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.603368 |