Advanced insulated gate bipolar transistor technologies
The thesis aims at investigating the state-of-the-art The Insulated Gate Bipolar Transistor (IGBT) technologies and exploring novel device concepts based on the IGBT core in order to enhance device performance and functionality. First, a novel double gate IGBT (DG-IGBT) is demonstrated by numerical...
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University of Cambridge
2010
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.604680 |