Development of advanced GaAs based quantum dot devices
This thesis details research on the development of ~1.3μm quantum dot (QD) devices. QD devices which are theoretically ideal for the realisation of temperature insensitive lasers. A method to measure the recombination coefficients in a semiconductor laser is developed, and the role of Auger recombin...
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University of Sheffield
2014
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.605477 |