Transport properties for pure strained Ge quantum well
Modulation doped heterostructures consisting of a strained Ge (sGe) quantum well on a Si0.2Ge0.8 virtual substrate have been used to study enhancement of the transport properties of holes in the sGe channel due to the effective reduction of impurity scattering by placing the doping layer away from t...
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University of Warwick
2014
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.606207 |