Modelling of high-K gate oxides on GaAs and Ge based high mobility MOSFETs

Modelling of high-K gate oxides on GaAs and Ge based high mobility MOSFETs

Bibliographic Details
Main Author: Lin, Liang
Published: University of Cambridge 2011
Subjects:
620
Online Access:http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.609643

Internet

http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.609643

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