Defects in gallium arsenide lasers
Diffused GaAs laser diodes were operated close to liquid nitrogen temperature and the infra-red near-field emission patterns photographed at currents above and below threshold. Optical transmission using photon energies close to the band gap energy revealed inhomogeneous donor distributions in the n...
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Imperial College London
1968
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| Online Access: | https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.623044 |