Physics and modeling of oxide semiconductor thin film transistors
In this thesis, we present an intensive investigation on the analytical models to describe the field-effect mobility, the current-voltage (I-V) characteristics, and the instability mechanisms in oxide TFTs, e.g. amorphous In-Ga-Zn-O TFTs. Here, we considered the unique material properties and underl...
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University College London (University of London)
2013
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.626302 |