Applications of GaN HFETs in UV detection and power electronics
Gallium nitride (GaN) has some unique material properties including direct band gap, ability to form a heterostructure resulting in two dimensional electron gas (2DEG) formation and a wide band gap (3.4eV) to offer high breakdown voltage. Such material properties make GaN extremely attractive for op...
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University of Sheffield
2014
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.640656 |