Fabrication and characterisation of III-nitride based nanostructure devices using nanosphere lithography techniques
In this work, fabrication and characterisation of nanostructure devices has been performed on InGaN/GaN multiple quantum wells (MQW) grown on either c-plane sapphire or (111) silicon substrates. A cost effective nanosphere lithography technique has been employed for the fabrication of a number of na...
| Main Author: | |
|---|---|
| Other Authors: | |
| Published: |
University of Sheffield
2015
|
| Subjects: | |
| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.647038 |