Fabrication and characterisation of III-nitride based nanostructure devices using nanosphere lithography techniques
In this work, fabrication and characterisation of nanostructure devices has been performed on InGaN/GaN multiple quantum wells (MQW) grown on either c-plane sapphire or (111) silicon substrates. A cost effective nanosphere lithography technique has been employed for the fabrication of a number of na...
Main Author: | Athanasiou, Modestos |
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Other Authors: | Wang, Tao |
Published: |
University of Sheffield
2015
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Subjects: | |
Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.647038 |
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