Computer simulation of pressure effects in tetravalent materials
<I>Ab initio</I> electronic structure calculations within the density functional formalism have been performed to study the behaviour of various types of bonding under pressure. Primarily covalent bonding is studied in the III-V semiconductor materials GaAs and InSb by studying their seq...
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University of Edinburgh
1998
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.653280 |